- About GrandSunergy
- Company Culture
About GrandSunergy
Guosheng Shian Technology Co., Ltd. ( hereinafter referred to as “Grand Sunergy Tech”, Shanghai Stock Exchange Code: 603778) is an enterprise specializing in ecological governance with over 30 years of experience. Grand Sunergy Tech has established a broad spectrum of professional services including project planning, architecture, landscape, tourism, municipal services, and ecological/environmental protection.
Adhering to the mission of ” Creating a Greener Earth and Better Life”, Grand Sunergy Tech entered into the renewable energy by 2022. New energy segment referred to as “Grand Sunergy” primarily concentrates on the production of high-efficiency HJT cells and modules, as well as investment and operation in the upstream and downstream industrial chain. Grand Sunergy owns the industry’s top professional R&D team and advanced technology routes. Currently, we have established five production bases in China, including HJT cells/Modules and Wafer.
Company Mission
Better World, Better Life
Company Core Value
Together as the One to win
Company Vision
To be the Leader in the New Energy Industry
Business Goal
To be a Family that can Make Every Employee Happy
To be a Group that can Contribute to the Development of Our Society
- About Grand Sunergy
About GrandSunergy
Guosheng Shian Technology Co., Ltd. ( hereinafter referred to as “Grand Sunergy Tech”, Shanghai Stock Exchange Code: 603778) is an enterprise specializing in ecological governance with over 30 years of experience. Grand Sunergy Tech has established a broad spectrum of professional services including project planning, architecture, landscape, tourism, municipal services, and ecological/environmental protection.
Adhering to the mission of ” Creating a Greener Earth and Better Life”, Grand Sunergy Tech entered into the renewable energy by 2022. New energy segment referred to as “Grand Sunergy” primarily concentrates on the production of high-efficiency HJT cells and modules, as well as investment and operation in the upstream and downstream industrial chain. Grand Sunergy owns the industry’s top professional R&D team and advanced technology routes. Currently, we have established five production bases in China, including HJT cells/Modules and Wafer.
- Company Culture
Company Mission
Better World, Better Life
Company Core Value
Together as the One to win
Company Vision
To be the Leader in the New Energy Industry
Business Goal
To be a Family that can Make Every Employee Happy
To be a Group that can Contribute to the Development of Our Society
- Grand Sunergy Research Institute
The Research Institute is headed by Professor Shen Wenzhong, a well-known PV expert in the industry, and Shen has formed an expert committee
Perovskite Research Branch
Conduct R&D on mass production technologies for next-generation perovskite tandem cells and modules
Energy Storage Research Branch
Conduct R&D on solid-state batteries, grid-forming energy storage systems, and PV-storage-direct-flexible systems
Equipment Research Branch
Conduct R&D on back contact silver-free equipment, novel zero busbar (0BB) string welding equipment, and O&M robots
Applied Research Branch
Conduct R&D on new technology applications for PV new energy systems
Material Research Branch
Conduct R&D on advanced materials including low-temperature silver paste for HJT cells
Energy Internet Research Branch
Conduct R&D on AI-enabled O&M, AI-powered electricity trading, AI-driven smart manufacturing, and virtual power plants
- Grand Sunergy Research Institute
The Research Institute is headed by Professor Shen Wenzhong, a well-known PV expert in the industry, and Shen has formed an expert committee
Perovskite Research Branch
Conduct R&D on mass production technologies for next-generation perovskite tandem cells and modules
Energy Storage Research Branch
Conduct R&D on solid-state batteries, grid-forming energy storage systems, and PV-storage-direct-flexible systems
Equipment Research Branch
Conduct R&D on back contact silver-free equipment, novel zero busbar (0BB) string welding equipment, and O&M robots
Applied Research Branch
Conduct R&D on new technology applications for PV new energy systems
Material Research Branch
Conduct R&D on advanced materials including low-temperature silver paste for HJT cells
Energy Internet Research Branch
Conduct R&D on AI-enabled O&M, AI-powered electricity trading, AI-driven smart manufacturing, and virtual power plants
- R&D Team
- Zhongwei ZhangChief Scientist and President
of the Research Institute - Wenzhong Shen Honorary President
of Research institute - Wenbin ZhangCTO and Executive President
of the Research Institute - Songmin LiuVice President
of Research Institute
of the Research Institute
R&D Team
Doctor of Microelectronics and Solid State Electronics of East China Normal University
Industry Experience
Key founder of China new generation of major Space power supply technology GaAs. The first session winner of National Aerospace. Times served as director of National Key Research Projects(973&863). First session Member of Academic Committee in International Solar Technology Promotions Centre of United Nations Industrial Development Organization. Chairman of Asian Photovoltaic Industry Association Technology Committee. Expert in National Technical Department 843 Planning Team. Core Member of China PV Industry Development Association. Head of Shanghai New Energy Industry Association. Vice President of Shanghai Solar Energy Society
of Research institute
R&D Team
Doctor of Shanghai Institute of Technical Phusics Chinese Academy of Sciences
Industry Experience
2001. Nominated as Distinguished Professor of Chang Jiang Scholars Programme. 2001, In charge of the The National Science Fund for Distinguished Young Scholars. From 2007, assume the office as the President in Shanghai Jiaotong University Solar Energy Reserarch Centre and the Executive Member of China Renewable Energy Society, as well as the Honorary Director of Shanghai Solar Energy Society
of the Research Institute
R&D Team
Doctor of Shanghai Institute of Ceramics Chinese Academy of Sciences
Industry Experience
Participated in the National Natural Science Foundation of China(863 Program), National Basic Research Program of China(973 Program) and The National Science Fund for Distinguished Young Scholars.
of Research Institute
R&D Team
Doctor of Nanjing University
Industry Experience
Completed one project of National Key Research and Development Program as a technical leader; participated in many projects of National Natural Science Foundation of China, National 863 Project, Jiangsu Province Major Scientific and Technological Achievement Transformation Project, Jiangsu Province Industrial Foresight and Common Key Technology-Competition Project and so on.Member of National Technical Committee for Standardization of Environmental Conditions and Environmental Tests for Electrical and Electronic Products (TC8), a member of Standardization Technical Committee of China Photovoltaic Industry Association, and a core member of China Material and Test Group Standard Committee.Obtained more than 60 authorized patents, published more than 20 scientific research papers, and completed the formulation of more than 10 national standards, industrial standards and group standards and specifications as the main drafter.
- Technology of HJT
- HJT Series
Technology Advancements of HJT Modules
Higher Bifaciality / 90%+Bifaciality
Temperature Coefficient / -0.24%/℃
TC: -0.24%/°C for HJT and -0.29%/°C for TOPCon, giving HJT an advantage of about 0.05%/°C. At 30°C to 35°C, HJT can achieve up to 2.5% more power generation than TOPCon.
NO PID NO LID / High Reliability
No LID caused by B-O effect, outstanding PID resistance by TCO film, to best guarantee long-period durability and yield.
Weak Light Performances / High Energy Yield
N-type substrates, with high minority carrier lifetimes, outperform conventional P-type silicon in low light, ensuring higher power output in low irradiation.
LCOE / Lower LCOE
A cutting-edge and most prominent technology to best reduce LCOE.
Low Degradation / Low Degradation Rate
- Technology of HJT
Technology Advancements of HJT Modules
Higher Bifaciality / 90%+Bifaciality
Temperature Coefficient / -0.24%/℃
TC: -0.24%/°C for HJT and -0.29%/°C for TOPCon, giving HJT an advantage of about 0.05%/°C. At 30°C to 35°C, HJT can achieve up to 2.5% more power generation than TOPCon.
NO PID NO LID / High Reliability
No LID caused by B-O effect, outstanding PID resistance by TCO film, to best guarantee long-period durability and yield.
Weak Light Performances / High Energy Yield
N-type substrates, with high minority carrier lifetimes, outperform conventional P-type silicon in low light, ensuring higher power output in low irradiation.
LCOE / Lower LCOE
A cutting-edge and most prominent technology to best reduce LCOE.
Low Degradation / Low Degradation Rate
- HJT Series
- PERC Series
